Electrochemically deposited Pd-induced crystallization of parallel needlelike polycrystalline silicon from prepatterned amorphous silicon thin films

C. W. Chao, G. R. Hu, Yew-Chuhg Wu*, Y. C. Chen, M. S. Feng

*Corresponding author for this work

Research output: Contribution to journalArticle

2 Scopus citations

Abstract

Electrochemically deposited Pd-induced crystallization of prepatterned amorphous silicon (a-Si) thin films was proposed for the first time in this study. Most of palladium clusters were found to deposit on the sidewall of the amorphous-silicon islands. After samples were annealed at 530°C, parallel needlelike polycrystalline silicon grains were observed on the a-Si film with a constant angle of ∼55° from the edge. The direction of the primary grain growth was along <211> and the secondary growth occurred along <011> direction.

Original languageEnglish
JournalElectrochemical and Solid-State Letters
Volume5
Issue number2
DOIs
StatePublished - 1 Feb 2002

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