Electrically sign-reversible transverse g -factors of holes in droplet epitaxial GaAs/AlGaAs quantum dots under uniaxial stress

Yu Nien Wu, Ming Fan Wu, Ya Wen Ou, Ying Lin Chou, Shun-Jen Cheng*

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

3 Scopus citations

Abstract

We present a theoretical investigation of anisotropic g-factor tensors of single holes confined in droplet epitaxial GaAs/AlGaAs quantum dots under electrical and mechanical controls using the gauge-invariant discretization method within the framework of four-band Luttinger-Kohn k - ·p - theory. We reveal an intrinsic obstacle to realize the electrical sign reversal of the hole g-factors, being a key condition required for a full spin control in the scheme of g-tensor modulation, for the quantum dots solely with electrical bias control. Constructively, our studies show that, besides electrical gating, slightly stressing an inherently unstrained droplet epitaxial GaAs/AlGaAs quantum dot can offset the transverse hole g-factor to be nearly zero and make the electrical sign reversal of the hole g-factors feasible.

Original languageEnglish
Article number085309
JournalPhysical Review B
Volume96
Issue number8
DOIs
StatePublished - 23 Aug 2017

Fingerprint Dive into the research topics of 'Electrically sign-reversible transverse g -factors of holes in droplet epitaxial GaAs/AlGaAs quantum dots under uniaxial stress'. Together they form a unique fingerprint.

Cite this