The challenges involved in the realization of microcavity light emitters using photonic bandgap (PBG) crystals with electrical injection were described. Metal-organic vapor phase epitaxy (MOVPE) was used for the growth of the device heterostructure on GaAs substrate. The measured far-field radiation patterns showed considerable linewidth narrowing in the case of missing PBG formation and confirmed that the lasing originates from the defect mode.
|Number of pages||2|
|Journal||Conference Proceedings - Lasers and Electro-Optics Society Annual Meeting-LEOS|
|State||Published - 1 Dec 2001|
|Event||14th Annual Meeting of the IEEE Lasers and Electro-Optics Society - San Diego, CA, United States|
Duration: 11 Nov 2001 → 15 Nov 2001