Electrically driven nanoarrow array green LED

J. R. Chang*, S. P. Chang, Y. C. Chen, K. P. Sou, Y. J. Cheng, Hao-Chung Kuo, C. Y. Chang

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

Abstract

An electrically driven nanopyramid green light emitting diode (LED) was demonstrated. The nanopyramid arrays were fabricated from a GaN substrate by patterned nanopillar etch, pillar side wall passivation, and epitaxial regrowth. Multiple quantum wells were selectively grown on the facets of the nanopyramids. The fabricated LED emits green wavelength under electrical injection. The emission exhibits a less carrier density dependent wavelength shift and higher internal quantum efficiency as compared with a reference c-plane sample at the same wavelength. It shows a promising potential for using nanopyramid in high In content LED applications.

Original languageEnglish
Title of host publicationLight-Emitting Diodes
Subtitle of host publicationMaterials, Devices, and Applications for Solid State Lighting XVI
DOIs
StatePublished - 5 Mar 2012
EventLight-Emitting Diodes: Materials, Devices, and Applications for Solid State Lighting XVI - San Francisco, CA, United States
Duration: 24 Jan 201226 Jan 2012

Publication series

NameProceedings of SPIE - The International Society for Optical Engineering
Volume8278
ISSN (Print)0277-786X

Conference

ConferenceLight-Emitting Diodes: Materials, Devices, and Applications for Solid State Lighting XVI
CountryUnited States
CitySan Francisco, CA
Period24/01/1226/01/12

Keywords

  • GaN
  • LEDs
  • semipolar

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