Electrical transport in transparent conducting tin-doped indium oxide films

S. S. Yeh*, J. Y. Lu, M. W. Shiu, J. J. Lin

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

Abstract

We have studied the temperature behavior of the electrical resistivities ρ(T) in a series of tin-doped indium-oxide films with different residual resistivities ρ0 varying from 218 to 568 μ cm. We found that the temperature dependence of ρ can be well described by the Bloch-Grüneisen law from 300 K down to about 100 K. In particular, we observed that the strength of the electron-phonon coupling, βBG (which characterizes a prefactor in the Bloch-Grüneisen formula) increases linearly with increasing ρ0. This result is not understood in terms of current theoretical concept for electron-phonon interaction in metals.

Original languageEnglish
Title of host publicationLOW TEMPERATURE PHYSICS
Subtitle of host publication24th International Conference on Low Temperature Physics - LT24
Pages1548-1549
Number of pages2
DOIs
StatePublished - 10 Aug 2006
EventLOW TEMPERATURE PHYSICS: 24th International Conference on Low Temperature Physics - LT24 - Orlando, FL, United States
Duration: 10 Aug 200617 Oct 2006

Publication series

NameAIP Conference Proceedings
Volume850
ISSN (Print)0094-243X
ISSN (Electronic)1551-7616

Conference

ConferenceLOW TEMPERATURE PHYSICS: 24th International Conference on Low Temperature Physics - LT24
CountryUnited States
CityOrlando, FL
Period10/08/0617/10/06

Keywords

  • Bloch-Gruneisen law
  • Disorder
  • Electrical transport

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