Electrical suppression of all nonradiative recombination pathways in monolayer semiconductors

Der-Hsien Lien, Shiekh Zia Uddin, Matthew Yeh, Matin Amani, Hyungjin Kim, Joel W. Ager, Eli Yablonovitch, Ali Javey*

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

72 Scopus citations

Abstract

Defects in conventional semiconductors substantially lower the photoluminescence (PL) quantum yield (QY), a key metric of optoelectronic performance that directly dictates the maximum device efficiency. Two-dimensional transition-metal dichalcogenides (TMDCs), such as monolayer MoS2, often exhibit low PL QY for as-processed samples, which has typically been attributed to a large native defect density. We show that the PL QY of as-processed MoS2 and WS2 monolayers reaches near-unity when they are made intrinsic through electrostatic doping, without any chemical passivation. Surprisingly, neutral exciton recombination is entirely radiative even in the presence of a high native defect density. This finding enables TMDC monolayers for optoelectronic device applications as the stringent requirement of low defect density is eased.

Original languageEnglish
Pages (from-to)468-+
Number of pages30
JournalScience
Volume364
Issue number6439
DOIs
StatePublished - 3 May 2019

Keywords

  • CHARGED EXCITONS
  • TRANSITION
  • PHOTOLUMINESCENCE
  • DEFECTS
  • MOS2
  • WS2

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