Electrical-stress effects and device modeling of 0.18-μm RF MOSFETs

H. L. Kao*, Albert Chin, C. C. Liao, C. C. Chen, Sean P. McAlister, C. C. Chi

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

16 Scopus citations

Abstract

In this paper, a novel microstrip-line layout is used to make accurate measurements of the minimum noise figure NFmin) of RF MOSFETs. A low NFmin of 1.05 dB at 10 GHz was directly measured for 16-finger 0.18-μm MOSFETs, without de-embedding. Using an analytical expression for NFmin, we have developed a self-consistent dc current-voltage, S-parameter, and NFmin model, where the simulated results match the measured device characteristics well, both before and after electrical stress.

Original languageEnglish
Pages (from-to)636-642
Number of pages7
JournalIEEE Transactions on Electron Devices
Volume53
Issue number4
DOIs
StatePublished - 1 Apr 2006

Keywords

  • Lifetime
  • Minimum noise figure (NF)
  • Model
  • RF noise
  • Stress

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