In this paper, a novel microstrip-line layout is used to make accurate measurements of the minimum noise figure NFmin) of RF MOSFETs. A low NFmin of 1.05 dB at 10 GHz was directly measured for 16-finger 0.18-μm MOSFETs, without de-embedding. Using an analytical expression for NFmin, we have developed a self-consistent dc current-voltage, S-parameter, and NFmin model, where the simulated results match the measured device characteristics well, both before and after electrical stress.
- Minimum noise figure (NF)
- RF noise