Electrical stability improvement for lanthanum oxide films by nitrogen incorporation using plasma immersion ion implantation

Banani Sen*, B. L. Yang, H. Wong, C. W. Kok, M. K. Bera, P. K. Chu, A. Huang, K. Kakushima, H. Iwai

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contribution

3 Scopus citations

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Chemical Compounds

Engineering & Materials Science