Electrical stability improvement for lanthanum oxide films by nitrogen incorporation using plasma immersion ion implantation

Banani Sen*, B. L. Yang, H. Wong, C. W. Kok, M. K. Bera, P. K. Chu, A. Huang, K. Kakushima, H. Iwai

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contribution

3 Scopus citations

Abstract

The effect of nitrogen implantation on thin lanthanum oxide (La 2O3) films grown by e-beam evaporation are investigated using x-ray photoelectron spectroscopy (XPS), current-voltage (I-V) and capacitance-voltage (C-V) measurements. The amount of nitrogen incorporation in the oxide film by Plasma Immersion Ion-Implantation (PII) is found to be quite low (about 3% near the surface). However, the introduction of nitrogen atoms into the La2O3 network results in a significant reduction in the oxide traps and leads to a notable improvement in both material and electrical properties of the dielectric.

Original languageEnglish
Title of host publicationIEEE Conference on Electron Devices and Solid-State Circuits 2007, EDSSC 2007
Pages637-640
Number of pages4
DOIs
StatePublished - 2007
EventIEEE Conference on Electron Devices and Solid-State Circuits 2007, EDSSC 2007 - Tainan, Taiwan
Duration: 20 Dec 200722 Dec 2007

Publication series

NameIEEE Conference on Electron Devices and Solid-State Circuits 2007, EDSSC 2007

Conference

ConferenceIEEE Conference on Electron Devices and Solid-State Circuits 2007, EDSSC 2007
CountryTaiwan
CityTainan
Period20/12/0722/12/07

Keywords

  • High-k dielectric
  • Lanthanum oxide
  • Nitrogen
  • Plasma immersion ion-implantation

Fingerprint Dive into the research topics of 'Electrical stability improvement for lanthanum oxide films by nitrogen incorporation using plasma immersion ion implantation'. Together they form a unique fingerprint.

  • Cite this

    Sen, B., Yang, B. L., Wong, H., Kok, C. W., Bera, M. K., Chu, P. K., Huang, A., Kakushima, K., & Iwai, H. (2007). Electrical stability improvement for lanthanum oxide films by nitrogen incorporation using plasma immersion ion implantation. In IEEE Conference on Electron Devices and Solid-State Circuits 2007, EDSSC 2007 (pp. 637-640). [4450205] (IEEE Conference on Electron Devices and Solid-State Circuits 2007, EDSSC 2007). https://doi.org/10.1109/EDSSC.2007.4450205