Electrical resistivities and thermopowers of transparent Sn-doped indium oxide films

Z. Q. Li*, Juhn-Jong Lin

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

71 Scopus citations

Abstract

We have systematically measured the electrical resistivities and thermopowers of transparent tin-doped indium oxide films. We found that the resistivities obey the Bloch-Grüneisen law between 25 and 300 K, whereas below 25 K, the resistivities slightly increase logarithmically with the decreasing temperature due to the weak-localization and electron-electron interaction effects. The thermopowers are negative and decrease linearly with temperature from 300 K down to 1.8 K. Our results strongly indicate that the tin-doped indium oxide films behave as a good, free-electron-like conductor while being transparent.

Original languageEnglish
Pages (from-to)5918-5920
Number of pages3
JournalJournal of Applied Physics
Volume96
Issue number10
DOIs
StatePublished - 15 Nov 2004

Fingerprint Dive into the research topics of 'Electrical resistivities and thermopowers of transparent Sn-doped indium oxide films'. Together they form a unique fingerprint.

Cite this