Electrical reliability issues of integrating low-K dielectrics with Cu metallization

Z. C. Wu; Z. W. Shiung; C. C. Wang; K. L. Fang; R. G. Wu; Y. L. Liu; Bing-Yue Tsui; M. C. Chen; W. Chang; P. F. Chou; S. M. Jang; C. H. Yu; M. S. Liang

doi:10.1109/IITC.2000.854289

Electrical reliability issues of integrating low-K dielectrics with Cu metallization

Z. C. Wu, Z. W. Shiung, C. C. Wang, K. L. Fang, R. G. Wu, Y. L. Liu, Bing-Yue Tsui, M. C. Chen, W. Chang, P. F. Chou, S. M. Jang, C. H. Yu, M. S. Liang

National Chiao Tung University

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

5 Scopus citations

Abstract

Electrical reliability issues of two organic aromatic low-K materials (K = 2.6 ∼ 2.8) were investigated. Both materials show acceptable thermal stability and good dielectric barrier property against Cu penetration. C-V curve instability was observed under bias-temperature stress (BTS) for the first time. It can be explained by the model of stress induced dielectric polarization charges. This instability may be an issue of long term stability of circuits.

Original language	English
Title of host publication	Proceedings of the IEEE 2000 International Interconnect Technology Conference, IITC 2000
Publisher	Institute of Electrical and Electronics Engineers Inc.
Pages	82-84
Number of pages	3
ISBN (Electronic)	0780363272, 9780780363274
DOIs	https://doi.org/10.1109/IITC.2000.854289
State	Published - 1 Jan 2000
Event	3rd IEEE International Interconnect Technology Conference, IITC 2000 - Burlingame, United States Duration: 5 Jun 2000 → 7 Jun 2000

Publication series

Name	Proceedings of the IEEE 2000 International Interconnect Technology Conference, IITC 2000

Conference

Conference	3rd IEEE International Interconnect Technology Conference, IITC 2000
Country	United States
City	Burlingame
Period	5/06/00 → 7/06/00

Access to Document

10.1109/IITC.2000.854289

Link to publication in Scopus

Fingerprint Dive into the research topics of 'Electrical reliability issues of integrating low-K dielectrics with Cu metallization'. Together they form a unique fingerprint.

Cite this

Wu, Z. C., Shiung, Z. W., Wang, C. C., Fang, K. L., Wu, R. G., Liu, Y. L., Tsui, B-Y., Chen, M. C., Chang, W., Chou, P. F., Jang, S. M., Yu, C. H., & Liang, M. S. (2000). Electrical reliability issues of integrating low-K dielectrics with Cu metallization. In Proceedings of the IEEE 2000 International Interconnect Technology Conference, IITC 2000 (pp. 82-84). [854289] (Proceedings of the IEEE 2000 International Interconnect Technology Conference, IITC 2000). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/IITC.2000.854289

Wu, Z. C. ; Shiung, Z. W. ; Wang, C. C. ; Fang, K. L. ; Wu, R. G. ; Liu, Y. L. ; Tsui, Bing-Yue ; Chen, M. C. ; Chang, W. ; Chou, P. F. ; Jang, S. M. ; Yu, C. H. ; Liang, M. S. / Electrical reliability issues of integrating low-K dielectrics with Cu metallization. Proceedings of the IEEE 2000 International Interconnect Technology Conference, IITC 2000. Institute of Electrical and Electronics Engineers Inc., 2000. pp. 82-84 (Proceedings of the IEEE 2000 International Interconnect Technology Conference, IITC 2000).

@inproceedings{d92571a4782047fb9c8f605a02358f4c,

title = "Electrical reliability issues of integrating low-K dielectrics with Cu metallization",

abstract = "Electrical reliability issues of two organic aromatic low-K materials (K = 2.6 ∼ 2.8) were investigated. Both materials show acceptable thermal stability and good dielectric barrier property against Cu penetration. C-V curve instability was observed under bias-temperature stress (BTS) for the first time. It can be explained by the model of stress induced dielectric polarization charges. This instability may be an issue of long term stability of circuits.",

author = "Wu, {Z. C.} and Shiung, {Z. W.} and Wang, {C. C.} and Fang, {K. L.} and Wu, {R. G.} and Liu, {Y. L.} and Bing-Yue Tsui and Chen, {M. C.} and W. Chang and Chou, {P. F.} and Jang, {S. M.} and Yu, {C. H.} and Liang, {M. S.}",

year = "2000",

month = jan,

day = "1",

doi = "10.1109/IITC.2000.854289",

language = "English",

series = "Proceedings of the IEEE 2000 International Interconnect Technology Conference, IITC 2000",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

pages = "82--84",

booktitle = "Proceedings of the IEEE 2000 International Interconnect Technology Conference, IITC 2000",

address = "United States",

note = "null ; Conference date: 05-06-2000 Through 07-06-2000",

}

Wu, ZC, Shiung, ZW, Wang, CC, Fang, KL, Wu, RG, Liu, YL, Tsui, B-Y, Chen, MC, Chang, W, Chou, PF, Jang, SM, Yu, CH & Liang, MS 2000, Electrical reliability issues of integrating low-K dielectrics with Cu metallization. in Proceedings of the IEEE 2000 International Interconnect Technology Conference, IITC 2000., 854289, Proceedings of the IEEE 2000 International Interconnect Technology Conference, IITC 2000, Institute of Electrical and Electronics Engineers Inc., pp. 82-84, 3rd IEEE International Interconnect Technology Conference, IITC 2000, Burlingame, United States, 5/06/00. https://doi.org/10.1109/IITC.2000.854289

Electrical reliability issues of integrating low-K dielectrics with Cu metallization. / Wu, Z. C.; Shiung, Z. W.; Wang, C. C.; Fang, K. L.; Wu, R. G.; Liu, Y. L.; Tsui, Bing-Yue; Chen, M. C.; Chang, W.; Chou, P. F.; Jang, S. M.; Yu, C. H.; Liang, M. S.

Proceedings of the IEEE 2000 International Interconnect Technology Conference, IITC 2000. Institute of Electrical and Electronics Engineers Inc., 2000. p. 82-84 854289 (Proceedings of the IEEE 2000 International Interconnect Technology Conference, IITC 2000).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

TY - GEN

T1 - Electrical reliability issues of integrating low-K dielectrics with Cu metallization

AU - Wu, Z. C.

AU - Shiung, Z. W.

AU - Wang, C. C.

AU - Fang, K. L.

AU - Wu, R. G.

AU - Liu, Y. L.

AU - Tsui, Bing-Yue

AU - Chen, M. C.

AU - Chang, W.

AU - Chou, P. F.

AU - Jang, S. M.

AU - Yu, C. H.

AU - Liang, M. S.

PY - 2000/1/1

Y1 - 2000/1/1

N2 - Electrical reliability issues of two organic aromatic low-K materials (K = 2.6 ∼ 2.8) were investigated. Both materials show acceptable thermal stability and good dielectric barrier property against Cu penetration. C-V curve instability was observed under bias-temperature stress (BTS) for the first time. It can be explained by the model of stress induced dielectric polarization charges. This instability may be an issue of long term stability of circuits.

AB - Electrical reliability issues of two organic aromatic low-K materials (K = 2.6 ∼ 2.8) were investigated. Both materials show acceptable thermal stability and good dielectric barrier property against Cu penetration. C-V curve instability was observed under bias-temperature stress (BTS) for the first time. It can be explained by the model of stress induced dielectric polarization charges. This instability may be an issue of long term stability of circuits.

UR - http://www.scopus.com/inward/record.url?scp=84962834052&partnerID=8YFLogxK

U2 - 10.1109/IITC.2000.854289

DO - 10.1109/IITC.2000.854289

M3 - Conference contribution

AN - SCOPUS:84962834052

T3 - Proceedings of the IEEE 2000 International Interconnect Technology Conference, IITC 2000

SP - 82

EP - 84

BT - Proceedings of the IEEE 2000 International Interconnect Technology Conference, IITC 2000

PB - Institute of Electrical and Electronics Engineers Inc.

Y2 - 5 June 2000 through 7 June 2000

ER -

Wu ZC, Shiung ZW, Wang CC, Fang KL, Wu RG, Liu YL et al. Electrical reliability issues of integrating low-K dielectrics with Cu metallization. In Proceedings of the IEEE 2000 International Interconnect Technology Conference, IITC 2000. Institute of Electrical and Electronics Engineers Inc. 2000. p. 82-84. 854289. (Proceedings of the IEEE 2000 International Interconnect Technology Conference, IITC 2000). https://doi.org/10.1109/IITC.2000.854289