@inproceedings{d92571a4782047fb9c8f605a02358f4c,
title = "Electrical reliability issues of integrating low-K dielectrics with Cu metallization",
abstract = "Electrical reliability issues of two organic aromatic low-K materials (K = 2.6 ∼ 2.8) were investigated. Both materials show acceptable thermal stability and good dielectric barrier property against Cu penetration. C-V curve instability was observed under bias-temperature stress (BTS) for the first time. It can be explained by the model of stress induced dielectric polarization charges. This instability may be an issue of long term stability of circuits.",
author = "Wu, {Z. C.} and Shiung, {Z. W.} and Wang, {C. C.} and Fang, {K. L.} and Wu, {R. G.} and Liu, {Y. L.} and Bing-Yue Tsui and Chen, {M. C.} and W. Chang and Chou, {P. F.} and Jang, {S. M.} and Yu, {C. H.} and Liang, {M. S.}",
year = "2000",
month = jan,
day = "1",
doi = "10.1109/IITC.2000.854289",
language = "English",
series = "Proceedings of the IEEE 2000 International Interconnect Technology Conference, IITC 2000",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
pages = "82--84",
booktitle = "Proceedings of the IEEE 2000 International Interconnect Technology Conference, IITC 2000",
address = "United States",
note = "null ; Conference date: 05-06-2000 Through 07-06-2000",
}