Electrical reliability issues of integrating low-K dielectrics with Cu metallization

Z. C. Wu, Z. W. Shiung, C. C. Wang, K. L. Fang, R. G. Wu, Y. L. Liu, Bing-Yue Tsui, M. C. Chen, W. Chang, P. F. Chou, S. M. Jang, C. H. Yu, M. S. Liang

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

5 Scopus citations

Abstract

Electrical reliability issues of two organic aromatic low-K materials (K = 2.6 ∼ 2.8) were investigated. Both materials show acceptable thermal stability and good dielectric barrier property against Cu penetration. C-V curve instability was observed under bias-temperature stress (BTS) for the first time. It can be explained by the model of stress induced dielectric polarization charges. This instability may be an issue of long term stability of circuits.

Original languageEnglish
Title of host publicationProceedings of the IEEE 2000 International Interconnect Technology Conference, IITC 2000
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages82-84
Number of pages3
ISBN (Electronic)0780363272, 9780780363274
DOIs
StatePublished - 1 Jan 2000
Event3rd IEEE International Interconnect Technology Conference, IITC 2000 - Burlingame, United States
Duration: 5 Jun 20007 Jun 2000

Publication series

NameProceedings of the IEEE 2000 International Interconnect Technology Conference, IITC 2000

Conference

Conference3rd IEEE International Interconnect Technology Conference, IITC 2000
CountryUnited States
CityBurlingame
Period5/06/007/06/00

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