Electrical properties of the free-standing diamond film at high voltages

Bohr Ran Huang*, Wen Cheng Ke, Wei-Kuo Chen

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

1 Scopus citations

Abstract

Polycrystalline diamond films were deposited on p-type (100) silicon substrates by the microwave plasma chemical vapor deposition system. The free-standing diamond film was then obtained by etching the silicon substrate with a KOH solution. It was found that more non-diamond components, i.e., SiC and amorphous carbon, existed on the bottom surface of the free-standing diamond film. Two different contact geometries, coplanar contact and sandwich contact geometries, were used to characterize the in-plane and transverse high-voltage electrical properties of the free-standing diamond film, respectively. The transverse electrical property of the free-standing diamond film showed the asymmetric current-voltage (I-V) characteristic and lower breakdown voltage at -220 V and 850 V. However, the in-plane electrical property exhibited the symmetric I-V characteristic in the range of -1100 V to 1100 V. The electrical properties were successfully represented by the Frenkel-Poole conduction mechanism at high voltages (> 200 V). The simulated results indicated that the breakdown field was strongly related to the Coulombic center density of the free-standing diamond film.

Original languageEnglish
Pages (from-to)3240-3245
Number of pages6
JournalJapanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
Volume40
Issue number5 A
DOIs
StatePublished - 1 May 2001

Keywords

  • Breakdown field
  • Coulombic center density
  • Free-standing diamond film
  • Frenkel-Poole

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