Electrical properties of Ta2O5 thin films deposited on Ta

S. Ezhilvalavan*, Tseung-Yuen Tseng

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

21 Scopus citations

Abstract

An experiment was conducted to determine the electrical properties of reactively sputtered tantalum pentoxide (Ta2O5) thin films using Ta as the bottom electrodes. Ta films were deposited onto SiO2/n-Si substrates by sputtering in Ar and in situ annealed at 700 °C for 10 min in N2 at 20 mTorr chamber pressure. The effectiveness of both as-deposited and annealed Ta bottom electrodes was compared on the leakage characteristics of Ta2O5 thin films. Results demonstrate the use of Ta as a potential bottom electrode material to replace the precious metal electrodes and to simplify the fabrication process of the Ta2O5 storage capacitor.

Original languageEnglish
Pages (from-to)2477-2479
Number of pages3
JournalApplied Physics Letters
Volume74
Issue number17
DOIs
StatePublished - 26 Apr 1999

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