Abstract
The electrical and dielectric properties of reactively sputtered Ta2O5 thin films with Cu as the top and bottom electrodes forming a simple metal insulator metal (MIM) structure, Cu/Ta2O5/Cu/n-Si, were studied. Ta2O5 films subjected to rapid thermal annealing (RTA) at 800°C for 30 s in N2 ambient crystallized the film, decreased the leakage current density and resulted in reliable time-dependent dielectric breakdown characteristics. The conduction mechanism at low electric fields (< 100 kV/cm) is due to Ohmic conduction; however, the Schottky mechanism becomes predominant at high fields (> 100 kV/cm). Present studies demonstrate the use of Cu as a potential electrode material to replace the conventional precious metal electrodes for Ta2O5 storage capacitors.
Original language | English |
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Pages (from-to) | 268-273 |
Number of pages | 6 |
Journal | Thin Solid Films |
Volume | 360 |
Issue number | 1-2 |
DOIs | |
State | Published - 1 Feb 2000 |