Electrical properties of Ta2O5 thin films deposited on Cu

S. Ezhilvalavan*, Tseung-Yuen Tseng

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

29 Scopus citations

Abstract

The electrical and dielectric properties of reactively sputtered Ta2O5 thin films with Cu as the top and bottom electrodes forming a simple metal insulator metal (MIM) structure, Cu/Ta2O5/Cu/n-Si, were studied. Ta2O5 films subjected to rapid thermal annealing (RTA) at 800°C for 30 s in N2 ambient crystallized the film, decreased the leakage current density and resulted in reliable time-dependent dielectric breakdown characteristics. The conduction mechanism at low electric fields (< 100 kV/cm) is due to Ohmic conduction; however, the Schottky mechanism becomes predominant at high fields (> 100 kV/cm). Present studies demonstrate the use of Cu as a potential electrode material to replace the conventional precious metal electrodes for Ta2O5 storage capacitors.

Original languageEnglish
Pages (from-to)268-273
Number of pages6
JournalThin Solid Films
Volume360
Issue number1-2
DOIs
StatePublished - 1 Feb 2000

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