Electrical properties of Ta-doped SnO2 thin films prepared by the metal-organic chemical-vapor deposition method

Sang Woo Lee*, Young Woon Kim, H. D. Chen

*Corresponding author for this work

Research output: Contribution to journalArticle

65 Scopus citations

Abstract

Undoped and Ta-doped SnO2 (Sn1-xTaxO2) thin films were prepared on Corning 7059 glass substrates by the metal-organic chemical-vapor deposition method. The relative amount of Ta, CTa=XTa/(XTa+XSn), varied from 0 to 7.13 at. %. For the five compositions studied, the lowest resistivity at room temperature was 2.01×10-4 cm at CTa=3.75% with charge carrier density and mobility of 1.27×1021 cm-3 and 24.5 cm2/Vs, respectively. In microstructural investigation, 3.75% Ta-doped film maintains a growth pattern of initial stage growth while 7.13% Ta-doped film has a high population of small grains at the interface, which results in large grains through competitive growth. The resistivity of the undoped film was 0.17 cm with charge carrier density and mobility of 1.31×1018 cm-3 and 28.1 cm2/Vs obtained from Hall measurement. This study suggests that Ta is an excellent n-type dopant in SnO2.

Original languageEnglish
Pages (from-to)350-352
Number of pages3
JournalApplied Physics Letters
Volume78
Issue number3
DOIs
StatePublished - 15 Jan 2001

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