Electrical properties of rare-earth oxides and La 2O 3 stacked gate dielectrics

M. Kouda*, K. Kakushima, P. Ahmet, K. Tsutsui, A. Nishiyama, N. Sugii, K. Natori, T. Hattori, H. Iwai

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

Abstract

The electrical properties of La 2O 3 gate dielectrics stacked with other rare-earth oxides were investigated. A reduction of fixed charged defects in the dielectric film was observed in CeO x/La 2O 3/NdO x compared to that of La 2O 3/NdO x. Obtained equivalent oxide thickness (EOT) was smaller for CeOx/ La 2O 3/NdO x gate stack compare to that of CeO x/ La 2O 3 gate stack while the estimated fixed charged defects in the dielectric film were almost same. An EOT of 0.45 nm was achieved by using Nd-oxide as a capping layer. Our results show that the combination of several rare-earth oxides is useful in improving the electrical properties of high-k gate stacks.

Original languageEnglish
Title of host publicationULSI Process Integration 7
Pages119-124
Number of pages6
Edition7
DOIs
StatePublished - 2011
Event7th Symposium on ULSI Process Integration - 220th ECS Meeting - Boston, MA, United States
Duration: 9 Oct 201114 Oct 2011

Publication series

NameECS Transactions
Number7
Volume41
ISSN (Print)1938-5862
ISSN (Electronic)1938-6737

Conference

Conference7th Symposium on ULSI Process Integration - 220th ECS Meeting
CountryUnited States
CityBoston, MA
Period9/10/1114/10/11

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