The electrical properties of La 2O 3 gate dielectrics stacked with other rare-earth oxides were investigated. A reduction of fixed charged defects in the dielectric film was observed in CeO x/La 2O 3/NdO x compared to that of La 2O 3/NdO x. Obtained equivalent oxide thickness (EOT) was smaller for CeOx/ La 2O 3/NdO x gate stack compare to that of CeO x/ La 2O 3 gate stack while the estimated fixed charged defects in the dielectric film were almost same. An EOT of 0.45 nm was achieved by using Nd-oxide as a capping layer. Our results show that the combination of several rare-earth oxides is useful in improving the electrical properties of high-k gate stacks.