Electrical Properties of Rapid Thermal-Enhanced Low Pressure Chemical Vapor Deposited Ta2O5 Thin Films

Chiao Ju Lee*, Lan Ting Huang, S. Ezhilvalavan, Tseung-Yuen Tseng

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

3 Scopus citations

Abstract

Electrical properties of rapid thermal-enhanced low pressure chemical vapor deposited Ta2O5 thin films subjected to an in situ two-step postannealing process were studied. Films treated by rapid thermal annealing in O2 at 550°C for 90 s followed by plasma O2 at 550°C for 30 s exhibit a leakage current density of 7.91 × 10-9 A/cm2 at an applied electric field of 100 kV/cm and a dielectric constant of ∼38. The decrease in leakage current density of the annealed Ta2O5 films in comparison to the as-deposited films is attributed mainly to the effective reduction of carbon impurities and oxygen vacancies by the two-step postannealing process.

Original languageEnglish
Pages (from-to)135-137
Number of pages3
JournalElectrochemical and Solid-State Letters
Volume2
Issue number3
DOIs
StatePublished - 1 Jan 1999

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