Electrical properties of O2 and N2 annealed (Ba,Sr)TiO3 thin films

M. S. Tsai*, S. C. Sun, Tseung-Yuen Tseng

*Corresponding author for this work

Research output: Contribution to journalConference articlepeer-review

6 Scopus citations


The dielectric constant and the leakage current of (Ba,Sr)TiO3 (BST) thin films deposited on Pt bottom electrodes before and after annealing in O2 and N2 ambients were investigated. The crystallinity was improved after post-deposition annealing. The refractive index, dielectric constant, and leakage current of the films were strongly dependent on the annealing conditions. The O2-annealed BST films have higher dielectric constant and lower leakage current than those annealed in N2 ambient.

Original languageEnglish
Pages (from-to)173-183
Number of pages11
JournalIntegrated Ferroelectrics
Issue number1 -4 pt 1
StatePublished - 1 Dec 1998
EventProceedings of the 1998 10th International Symposium on Integrated Ferroelectronics. Part 1 (of 2) - Monterey, CA, USA
Duration: 1 Mar 19984 Mar 1998

Fingerprint Dive into the research topics of 'Electrical properties of O<sub>2</sub> and N<sub>2</sub> annealed (Ba,Sr)TiO<sub>3</sub> thin films'. Together they form a unique fingerprint.

Cite this