Electrical properties of O2 and N2 annealed (Ba,Sr)TiO3 thin films

M. S. Tsai; S. C. Sun; Tseung-Yuen Tseng

Electrical properties of O₂ and N₂ annealed (Ba,Sr)TiO₃ thin films

M. S. Tsai^*, S. C. Sun, Tseung-Yuen Tseng

^*Corresponding author for this work

National Chiao Tung University

Research output: Contribution to journal › Conference article › peer-review

6 Scopus citations

Abstract

The dielectric constant and the leakage current of (Ba,Sr)TiO₃ (BST) thin films deposited on Pt bottom electrodes before and after annealing in O₂ and N₂ ambients were investigated. The crystallinity was improved after post-deposition annealing. The refractive index, dielectric constant, and leakage current of the films were strongly dependent on the annealing conditions. The O₂-annealed BST films have higher dielectric constant and lower leakage current than those annealed in N₂ ambient.

Original language	English
Pages (from-to)	173-183
Number of pages	11
Journal	Integrated Ferroelectrics
Volume	21
Issue number	1 -4 pt 1
State	Published - 1 Dec 1998
Event	Proceedings of the 1998 10th International Symposium on Integrated Ferroelectronics. Part 1 (of 2) - Monterey, CA, USA Duration: 1 Mar 1998 → 4 Mar 1998

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title = "Electrical properties of O2 and N2 annealed (Ba,Sr)TiO3 thin films",

abstract = "The dielectric constant and the leakage current of (Ba,Sr)TiO3 (BST) thin films deposited on Pt bottom electrodes before and after annealing in O2 and N2 ambients were investigated. The crystallinity was improved after post-deposition annealing. The refractive index, dielectric constant, and leakage current of the films were strongly dependent on the annealing conditions. The O2-annealed BST films have higher dielectric constant and lower leakage current than those annealed in N2 ambient.",

author = "Tsai, {M. S.} and Sun, {S. C.} and Tseung-Yuen Tseng",

year = "1998",

month = dec,

day = "1",

language = "English",

volume = "21",

pages = "173--183",

journal = "Integrated Ferroelectrics",

issn = "1058-4587",

publisher = "Taylor and Francis Ltd.",

number = "1 -4 pt 1",

note = "null ; Conference date: 01-03-1998 Through 04-03-1998",

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TY - JOUR

T1 - Electrical properties of O2 and N2 annealed (Ba,Sr)TiO3 thin films

AU - Tsai, M. S.

AU - Sun, S. C.

AU - Tseng, Tseung-Yuen

PY - 1998/12/1

Y1 - 1998/12/1

N2 - The dielectric constant and the leakage current of (Ba,Sr)TiO3 (BST) thin films deposited on Pt bottom electrodes before and after annealing in O2 and N2 ambients were investigated. The crystallinity was improved after post-deposition annealing. The refractive index, dielectric constant, and leakage current of the films were strongly dependent on the annealing conditions. The O2-annealed BST films have higher dielectric constant and lower leakage current than those annealed in N2 ambient.

AB - The dielectric constant and the leakage current of (Ba,Sr)TiO3 (BST) thin films deposited on Pt bottom electrodes before and after annealing in O2 and N2 ambients were investigated. The crystallinity was improved after post-deposition annealing. The refractive index, dielectric constant, and leakage current of the films were strongly dependent on the annealing conditions. The O2-annealed BST films have higher dielectric constant and lower leakage current than those annealed in N2 ambient.

UR - http://www.scopus.com/inward/record.url?scp=0032312459&partnerID=8YFLogxK

M3 - Conference article

AN - SCOPUS:0032312459

VL - 21

SP - 173

EP - 183

JO - Integrated Ferroelectrics

JF - Integrated Ferroelectrics

SN - 1058-4587

IS - 1 -4 pt 1

Y2 - 1 March 1998 through 4 March 1998

ER -