Electrical properties of lanthanum-scandate gate dielectric directly deposited on Ge

M. K. Bera, J. Song, K. Kakushima, P. Ahmet, K. Tsutsui, N. Sugii, T. Hattori, H. Iwai

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

3 Scopus citations

Abstract

The electrical performance of both Ge MOSCAP and MOSFET with LaScO x high-k gate dielectric directly deposited on Ge (100) without utilizing any interfacial passivation layer has been investigated. This study also reports about the control of Vfb/Vth through ScO concentration. Accordingly, a relatively larger hysteresis and higher density of interface states with ScO concentration having lower or higher than 50% along with increasing annealing temperatures were observed in general as a result of deterioration caused by the formation of GeOx at the interface in conjunction with more pronounce intermixing or Ge out-diffusion into LaScO x. Nevertheless, an ultrathin Si passivation layer is found to be advantageous to inhibit Ge incorporation into high-k bulk in the form of GeOx, thereby diminishing the resultant oxide charge trapping as well as improves the thermal stabilities of the entire LaScOx/Ge MOS structures. Besides, reasonably good electrical properties of Ge p-MOSFETs with LaScOx gate dielectric have been demonstrated.

Original languageEnglish
Title of host publicationECS Transactions - Physics and Technology of High-k Gate Dielectrics 7
Pages67-77
Number of pages11
Edition6
DOIs
StatePublished - 2009
Event7th International Symposium on High Dielectric Constant Materials and Gate Stacks - 216th Meeting of the Electrochemical Society - Vienna, Austria
Duration: 5 Oct 20097 Oct 2009

Publication series

NameECS Transactions
Number6
Volume25
ISSN (Print)1938-5862
ISSN (Electronic)1938-6737

Conference

Conference7th International Symposium on High Dielectric Constant Materials and Gate Stacks - 216th Meeting of the Electrochemical Society
CountryAustria
CityVienna
Period5/10/097/10/09

Fingerprint Dive into the research topics of 'Electrical properties of lanthanum-scandate gate dielectric directly deposited on Ge'. Together they form a unique fingerprint.

Cite this