Electrical properties of InSb metal/insulator/semiconductor diodes prepared by photochemical vapour deposition

Kai-Feng Huang*, J. S. Shie, J. J. Luo, J. S. Chen

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

15 Scopus citations

Abstract

Thin SiO2 films were prepared by photochemical vapour deposition. IR absorption and Auger electron spectroscopy showed that the dominant components of the oxide are silicon and oxygen with a small amount of hydrogen. Metal/insulator/semiconductor (MIS) capacitors were constructed on InSb substrates. Capacitance-voltage characteristics of the MIS capacitors were measured, and a midgap interface state density of the order of 1012 cm-2 eV-1 was determined. The amount of hysteresis observed was found to be about 10% of the inversion bias voltage. Annealing studies were also conducted to improve the electrical properties. After annealing, the midgap interface state density was reduced to 5 × 1011 cm-2 eV-1 and the amount of hysteresis reduced to 5% of the inversion bias voltage.

Original languageEnglish
Pages (from-to)145-152
Number of pages8
JournalThin Solid Films
Volume151
Issue number2
DOIs
StatePublished - 3 Aug 1987

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