The electrical properties of barium titanate films approximately from 1000A degree to 5000A degree thick, prepared by electron beam evaporation onto silicon (n or p) substrates in high vacuum system were investigated. The effects of substrate heating during deposition, different temperature and gases annealing process after the film, including the dielectric constant, loss tangent, conductivity, metal-insulator-semiconductor surface properties, and ferroelectricity were also investigated. It was found that the room temperature substrate deposition and the annealing temperature below 120 degree C, would give the relative dielectric constant up to 1000 for both n- and p-type silicon substrate. The ferroelectric transition of a barium titanate-silicon MIS structure was observed. The hysteresis behavior of the structure was demonstrated for the first time and seems promising for use as a nonvolatile memory device.
|Number of pages||12|
|Journal||J Natl Chiao Tung Univ|
|State||Published - 1 Jan 1976|