Electrical Properties of Compound 2D Semiconductor Mo 1-x Nb x S 2

Peng Lu, Yen Teng Ho, Yung Ching Chu, Ming Zhang, Po Yen Chien, Tien Tung Luong, Edward Yi Chang, Jason C.S. Woo

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

Abstract

In order for TMD such as molybdenum disulfide (MoS 2 ) to be useful for semiconductor industry, a controllable doping process is required. MoS 2 with substitutional Nb shows a p-type behavior compared to the n-type characteristics of nominal films. In this work, the role of Nb in MoS 2 will be examined, and a precise hole concentration control technique is demonstrated. Multi-layered Mo 1-x Nb x S 2 samples with accurately controlled Nb mole fraction are synthesized. Electrical characterization and material analysis are performed to quantify the impact of Nb with mole fraction from 3.5% to 11%. The effective carrier concentration (p) and the effective hole mobility (μ eff ) are found to be highly non-linear with respect to Nb mole fraction. Scanning Tunneling Microscope (STM) shows that the bandgap of the 2D transition metal dichalcogenide (TMD) is reduced by high mole fraction Nb. Therefore, Mo 1-x Nb x S 2 can be considered as a compound TMD semiconductor.

Original languageEnglish
Title of host publication2018 14th IEEE International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2018 - Proceedings
EditorsTing-Ao Tang, Fan Ye, Yu-Long Jiang
PublisherInstitute of Electrical and Electronics Engineers Inc.
ISBN (Electronic)9781538644409
DOIs
StatePublished - 5 Dec 2018
Event14th IEEE International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2018 - Qingdao, China
Duration: 31 Oct 20183 Nov 2018

Publication series

Name2018 14th IEEE International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2018 - Proceedings

Conference

Conference14th IEEE International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2018
CountryChina
CityQingdao
Period31/10/183/11/18

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