The electrical properties of CeOx/La2O3 gate stack have been investigated. The leakage current at the EOT around 1.0 nm was suppressed by one order of magnitude by introducing the CeO x/La2O3 stack, compared to that obtained in the La2O3 single layer. MOSFETs with gate stack of the CeOx/La2O3 stack were fabricated, and no significant degradation in mobility or interface state density has been observed.
|Title of host publication||ECS Transactions - Physics and Technology of High-k Gate Dielectrics 6|
|Number of pages||8|
|State||Published - 2008|
|Event||Physics and Technology of High-k Gate Dielectrics 6 - 214th ECS Meeting - Honolulu, HI, United States|
Duration: 13 Oct 2008 → 15 Oct 2008
|Conference||Physics and Technology of High-k Gate Dielectrics 6 - 214th ECS Meeting|
|Period||13/10/08 → 15/10/08|