Electrical properties of CeOx/La2O3 stack as a gate dielectric for advanced MOSFET technology

Miyuki Kouda*, Kiichi Tachi, Kuniyuki Kakshima, Parhat Ahmet, Kazuo Tsutsui, Nobuyuki Sugii, A. N. Chandorkar, Takeo Hattori, Hiroshi Iwai

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

6 Scopus citations

Abstract

The electrical properties of CeOx/La2O3 gate stack have been investigated. The leakage current at the EOT around 1.0 nm was suppressed by one order of magnitude by introducing the CeO x/La2O3 stack, compared to that obtained in the La2O3 single layer. MOSFETs with gate stack of the CeOx/La2O3 stack were fabricated, and no significant degradation in mobility or interface state density has been observed.

Original languageEnglish
Title of host publicationECS Transactions - Physics and Technology of High-k Gate Dielectrics 6
Pages153-160
Number of pages8
Edition5
DOIs
StatePublished - 2008
EventPhysics and Technology of High-k Gate Dielectrics 6 - 214th ECS Meeting - Honolulu, HI, United States
Duration: 13 Oct 200815 Oct 2008

Publication series

NameECS Transactions
Number5
Volume16
ISSN (Print)1938-5862
ISSN (Electronic)1938-6737

Conference

ConferencePhysics and Technology of High-k Gate Dielectrics 6 - 214th ECS Meeting
CountryUnited States
CityHonolulu, HI
Period13/10/0815/10/08

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