Electrical performances and structural designs of copper bonding in wafer-level three-dimensional integration

Kuan-Neng Chen*, A. M. Young, S. H. Lee, J. Q. Lu

*Corresponding author for this work

Research output: Contribution to journalArticle

5 Scopus citations

Abstract

The integrity of bonded Cu interconnects in wafer-level three-dimensional integration has been investigated as the function of pattern size and density, as well as bonding process parameter. The desired pattern density coupled with the application of bonding process profile we developed gives optimal yield and alignment accuracy, and provides excellent electrical connectivity and contact resistance through the entire wafer. This result is a key milestone in establishing the manufacturability of Cu-based interconnections for 3D integration technology.

Original languageEnglish
Pages (from-to)5143-5147
Number of pages5
JournalJournal of Nanoscience and Nanotechnology
Volume11
Issue number6
DOIs
StatePublished - 1 Dec 2011

Keywords

  • 3D IC
  • Cu bonding
  • Three-dimensional integration
  • Wafer bonding

Fingerprint Dive into the research topics of 'Electrical performances and structural designs of copper bonding in wafer-level three-dimensional integration'. Together they form a unique fingerprint.

Cite this