Electrical performance enhancement of Al-Zn-Sn-O thin film transistor by supercritical fluid treatment

Li Feng Teng, Po-Tsun Liu, Wei Ya Wang

Research output: Contribution to journalArticlepeer-review

9 Scopus citations

Abstract

In this letter, a low-temperature supercritical fluid (SCF) treatment was employed to enhance the electrical and optical properties of amorphous Al-Zn-Sn-O thin film transistors (a-AZTO TFTs) for flat-panel displays. The carrier mobility and threshold voltage of a-AZTO TFT were improved significantly after SCF process because of the reduction of trap density in the a-AZTO active layer. In addition, the SCF-treated a-AZTO TFT exhibited superior electrical reliability and less degradation after negative gate bias illumination stress. X-ray photoelectron spectroscopy analysis confirmed that the proposed SCF treatment could effectively oxidize a-AZTO film and change the oxidation states of Sn, resulting in the improvement of a-AZTO TFT device characteristics.

Original languageEnglish
Article number6574227
Pages (from-to)1154-1156
Number of pages3
JournalIEEE Electron Device Letters
Volume34
Issue number9
DOIs
StatePublished - 8 Aug 2013

Keywords

  • Al-Zn-Sn-O thin film transistor (Al-Zn-Sn-O TFT)
  • supercritical fluid (SCF)
  • transparent amorphous oxide semiconductor (TAOS)

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