Electrical performance and photo-responses enhancement by in situ nitrogen incorporation to amorphous InGaZnO thin-film transistors

Li Feng Teng*, Po-Tsun Liu, Chur Shyang Fun, Yi Teh Chou, Fu Hai Li, Chih Hsiang Chang, Han Ping D. Shieh

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

1 Scopus citations

Abstract

We studied wavelength dependent photo-responses in amorphous nitrogenated InGaZnO thin-film transistors (a-IGZO:N TFTs). The a-IGZO:N active layer was deposited by dc reactive sputter with a nitrogen and argon gas mixture at room temperature and performed the superior characteristics while comparing with the intrinsic IGZO TFTs.

Original languageEnglish
Title of host publicationSociety for Information Display - 18th International Display Workshops 2011, IDW'11
Pages113-115
Number of pages3
StatePublished - 1 Dec 2011
Event18th International Display Workshops 2011, IDW 2011 - Nagoya, Japan
Duration: 7 Dec 20119 Dec 2011

Publication series

NameProceedings of the International Display Workshops
Volume1
ISSN (Print)1883-2490

Conference

Conference18th International Display Workshops 2011, IDW 2011
CountryJapan
CityNagoya
Period7/12/119/12/11

Fingerprint Dive into the research topics of 'Electrical performance and photo-responses enhancement by in situ nitrogen incorporation to amorphous InGaZnO thin-film transistors'. Together they form a unique fingerprint.

Cite this