Electrical measurements of an AlGaN/GaN high-electron-mobility transistor structure grown on Si

Zhi Yao Zhang, Shun-Tsung Lo, Li Hung Lin*, Kuang Yao Chen, J. Z. Huang, Zhi Hao Sun, C. T. Liang, N. C. Chen, Chin An Chang, P. H. Chang

*Corresponding author for this work

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Abstract

We report on magnetotransport results for an Al 0. 15Ga 0. 85N/GaN high-electron-mobility-transistor structure grown on a p-type Si (111) substrate. Our results show that there exists an approximately temperature (T)-independent point, which could be ascribed to a direct transition from a weak insulator to a high Landau level filling factor quantum Hall state, exists in the longitudinal resistivity ρ xx. The Hall resistivity decreases with increasing T, compelling experimental evidence for electron-electron interaction effects in a weakly-disordered two-dimensional (2D) system. We find that electron-electron interaction effects can be estimated and eliminated, giving rise to a corrected nominally temperature-independent Hall slope. By fitting the low-field magnetotransport data to conventional 2D weak localization theory, we find that the dephasing rate 1/τ φ{symbol} is proportional to T. Moreover, 1/τ φ{symbol} is finite as T → 0, evidence for zero-temperature dephasing in our system.

Original languageEnglish
Pages (from-to)1471-1475
Number of pages5
JournalJournal of the Korean Physical Society
Volume61
Issue number9
DOIs
StatePublished - 1 Nov 2012

Keywords

  • Electron-electron interactions
  • GaN

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