Electrical investigation of Cu pumping in through-silicon vias for BEOL reliability in 3D integration

Chuan An Cheng, Ryuichi Sugie, Tomoyuki Uchida, Kou Hua Chen, Chi Tsung Chiu, Kuan-Neng Chen*

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

Abstract

It is crucial for Cu TSV to be reliable at the back-end-of-line (BEOL) procedure particularly at high temperature process step. Any unreliable Cu TSV may cause residual from thermal stress due to the mismatch of the coefficient of thermal expansion. Therefore, it is important to investigate on the behavior of Cu pumping whether it will affect the electrical performance in BEOL integration. Two sets of Cu pumping with pitch 30 μm and 40 μm were annealed to measure their resistance at the temperature lower than 250°C. Based on the results, the narrow pitch of 30μm can be applied in post via last process below 250°C for BEOL procedure in 3D integration.

Original languageEnglish
Title of host publication2015 International 3D Systems Integration Conference, 3DIC 2015
PublisherInstitute of Electrical and Electronics Engineers Inc.
PagesTS8.12.1-TS8.12.4
ISBN (Electronic)9781467393850
DOIs
StatePublished - 20 Nov 2015
EventInternational 3D Systems Integration Conference, 3DIC 2015 - Sendai, Japan
Duration: 31 Aug 20152 Sep 2015

Publication series

Name2015 International 3D Systems Integration Conference, 3DIC 2015

Conference

ConferenceInternational 3D Systems Integration Conference, 3DIC 2015
CountryJapan
CitySendai
Period31/08/152/09/15

Keywords

  • Cu TSV
  • Cu pumping

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