@inproceedings{c7f0695aea8a43b4aae9375725cd5836,
title = "Electrical investigation and reliability of 3D integration platform using Cu TSVs and micro-bumps with Cu/Sn-BCB hybrid bonding",
abstract = "In this paper, the wafer-level three-dimensional (3-D) integration scheme using copper TSVs and fine-pitch Cu/Sn-BCB hybrid bonding is designed, fabricated, and completely investigated on electrical characteristics and stability. Key technologies in this 3D integration scheme include high aspect-ratio Cu TSV, fine-pitch Cu/Sn micro-bumps, 250 °C low temperature hybrid bonding, wafer thinning and backside RDL formation. The Kelvin and leakage current structures are designed for realization of fundamental electrical properties, and the daisy chain feature is designed for stability evaluation with several reliability tests. All the samples pass the 1000-cycle thermal cycling test, humidity test, and multiple AC current stressing. This scheme shows a significant leakage current improvement after modifying backside process. The stable reliability results and excellent electrical characteristics indicate that the 3D integration scheme has the excellent sealing ability against oxidation and corrosion, and could be potentially applied for future mass production.",
author = "Chang, {Yao Jen} and Ko, {Cheng Ta} and Hsiao, {Zhi Cheng} and Chiang, {Cheng Hao} and Fu, {Huan Chun} and Yu, {Tsung Han} and Fan, {Cheng Han} and Lo, {Wei Chung} and Kuan-Neng Chen",
year = "2013",
month = sep,
day = "9",
doi = "10.1109/ECTC.2013.6575551",
language = "English",
isbn = "9781479902330",
series = "Proceedings - Electronic Components and Technology Conference",
pages = "64--70",
booktitle = "2013 IEEE 63rd Electronic Components and Technology Conference, ECTC 2013",
note = "null ; Conference date: 28-05-2013 Through 31-05-2013",
}