Electrical improvement of MIS capacitor with HfAlOx gate dielectrics treated by dual plasma treatment

I. Chung Deng*, Kow-Ming Chang, Ting Chia Chang, Po Chun Chang, Bo Wen Huang, Chien Hung Wu

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

High dielectric constant materials (high-k) such as Hf-based thin films are the promising candidates for 45-nm CMOS technology. It has been described that nitridation processes could improve thermal stability and dielectric constants of Hf-based dielectrics. Furthermore, fluorine incorporation into high-k dielectric was also proposed in order to suppress leakage current and passivate defects. In this study, we examined dual plasma treatment (CF4 pre-treatment and N2 post-treatment) on HfAlOx thin films in order to improve electrical characteristics. Based on our experimental results, HfAlOx Metal-Insulator-Semiconductor (MIS) capacitor properties such as capacitance density, gate leakage current density, and hysteresis could be successfully improved. Compared to untreated samples, capacitance is 42.5% higher and gate leakage is suppressed about three orders when dual plasma treatment is used. According to this study, dual plasma treatment would be an effective technology to improve the electrical characteristic of HfAlOx thin films.

Original languageEnglish
Title of host publicationSilicon Compatible Materials, Processes, and Technologies for Advanced Integrated Circuits and Emerging Applications 2
Pages211-218
Number of pages8
Edition6
DOIs
StatePublished - 19 Nov 2012
EventInternational Symposium on Silicon Compatible Materials, Processes, and Technologies for Advanced Integrated Circuits and Emerging Applications 2 - 221st ECS Meeting - Seattle, WA, United States
Duration: 6 May 201210 May 2012

Publication series

NameECS Transactions
Number6
Volume45
ISSN (Print)1938-5862
ISSN (Electronic)1938-6737

Conference

ConferenceInternational Symposium on Silicon Compatible Materials, Processes, and Technologies for Advanced Integrated Circuits and Emerging Applications 2 - 221st ECS Meeting
CountryUnited States
CitySeattle, WA
Period6/05/1210/05/12

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    Deng, I. C., Chang, K-M., Chang, T. C., Chang, P. C., Huang, B. W., & Wu, C. H. (2012). Electrical improvement of MIS capacitor with HfAlOx gate dielectrics treated by dual plasma treatment. In Silicon Compatible Materials, Processes, and Technologies for Advanced Integrated Circuits and Emerging Applications 2 (6 ed., pp. 211-218). (ECS Transactions; Vol. 45, No. 6). https://doi.org/10.1149/1.3700955