Electrical enhancement of solid phase crystallized poly-Si thin-film transistors with fluorine ion implantation

Chun Hao Tu*, Ting Chang Chang, Po-Tsun Liu, Chih Hung Chen, Che Yu Yang, Yung Chun Wu, Hsin Chuu Liu, Li Ting Chang, Chia Chou Tsai, Simon M. Sze, Chun Yen Chang

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

11 Scopus citations

Abstract

Solid phase recrystallired polycryslalline silicon thin-ulm transistors (SPC poly-Si TFTs) with fluorine ion implantation were investigated in this study. Electrical characteristics and reliability of the proposed poly-Si TFTs were improved effectively, especially for field effect mobility and off current. The fluorine-ion-implanted poly-Si TFT can suppress the hot carrier multiplication near ihe drain side, leading to superior endurance to electrical stress compared with conventional poly-Si TFTs. It was found mat fluorine ions will pile up at the poly-Si interface during thermal annealing, without the initial deposition of pad oxide. The proposed technology is manageable and compatible with conventional poly-Si TFT fabrication. As the ion dosages increase more than 5 × 10 15 cm -2, however, the electrical characteristics of poly-Si TFTs were degraded due to the increase of trap state density caused by the fluorine segregation in the poly-Si film.

Original languageEnglish
Pages (from-to)G815-G818
Number of pages4
JournalJournal of the Electrochemical Society
Volume153
Issue number9
DOIs
StatePublished - 5 Jul 2006

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