Electrical conduction mechanisms in natively doped ZnO nanowires (II)

Lin Tzung Tsai*, Shao Pin Chiu, Jia Grace Lu, Juhn-Jong Lin

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

23 Scopus citations

Abstract

We have measured the intrinsic electrical resistivities, ρ(T), of three individual single-crystalline ZnO nanowires (NWs) from 320 down to 1.3K. The NWs were synthesized via carbon thermal chemical vapor deposition and the four-probe Pt contacting electrodes were made by the focused-ion-beam technique. Analysis of the overall temperature behavior of ρ(T) confirms that the charge transport processes in natively doped ZnO NWs are due to a combination of the thermal activation conduction and the nearest-neighbor hopping conduction processes, as proposed and explained in a recent work (Chiu et al 2009 Nanotechnology 20 015203) where the ZnO NWs were grown by a different thermal evaporation method and the four-probe electrodes were made by the electron-beam lithography technique. Taken together, the observations of these two complementary studies firmly establish that the electrical conduction mechanisms in natively doped ZnO NWs are unique and now satisfactorily understood.

Original languageEnglish
Article number145202
JournalNanotechnology
Volume21
Issue number14
DOIs
StatePublished - 24 Mar 2010

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