Electrical conduction and breakdown in sol-gel derived PZT thin films

Reza Moazzami*, Chen-Ming Hu, William H. Shepherd

*Corresponding author for this work

Research output: Contribution to journalConference articlepeer-review

24 Scopus citations

Abstract

The viability of lead zirconate titanate (PZT) films as a storage dielectric for DRAM applications is discussed. 4000 angstrom PZT films with an effective SiO2 thickness less than 17 angstrom were prepared by sol-gel deposition. The films exhibited ohmic behavior at low fields and exponential field dependence at high fields. The conduction characteristics can be modeled accurately using expressions derived for ionic conductivity. At the same effective SiO2 field, the leakage and time-dependent dielectric breakdown (TDDB) characteristics are superior to other dielectric structures. However, lifetime extrapolations to worst-case operating conditions show that TDDB may be a very serious limitation for DRAM applications. Optimization of material properties of PZT films, especially the TDDB lifetime, is necessary for reliable DRAM operation.

Original languageEnglish
Pages (from-to)231-236
Number of pages6
JournalAnnual Proceedings - Reliability Physics (Symposium)
DOIs
StatePublished - 1 Dec 1990
EventTwenty Eight International Reliability Physics Symposium 1990 - New Orleans, LA, USA
Duration: 27 Mar 199029 Mar 1990

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