Electrical characterization of W/HfO2 MOSFETs with La 2O3 incorporation

Hiroki Fujisawa*, A. Srivastava, Kuniyuki Kakushima, Parhat Ahmet, Kazuo Tsutsui, Nobuyuki Sugii, Takeo Hattori, C. K. Sarkar, Hiroshi Iwai

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

3 Scopus citations

Abstract

Electrical characterization of HfO2 MOSFETs with La 2O3 incorporation has been conducted. A shift in threshold voltage to negative direction has been observed with La2O 3 incorporation. Moreover, gm and subthreshold slope have been improved with La2O3. 1/f noise measurement has revealed that HfO2 gated MOSFET incorporating La2O 3 layer reduces the noise level .

Original languageEnglish
Title of host publicationECS Transactions - ISTC/CSTIC 2009 (CISTC)
Pages39-42
Number of pages4
Edition1 PART 1
DOIs
StatePublished - 2009
EventISTC/CSTIC 2009 (CISTC) - Shanghai, China
Duration: 19 Mar 200920 Mar 2009

Publication series

NameECS Transactions
Number1 PART 1
Volume18
ISSN (Print)1938-5862
ISSN (Electronic)1938-6737

Conference

ConferenceISTC/CSTIC 2009 (CISTC)
CountryChina
CityShanghai
Period19/03/0920/03/09

Fingerprint Dive into the research topics of 'Electrical characterization of W/HfO<sub>2</sub> MOSFETs with La <sub>2</sub>O<sub>3</sub> incorporation'. Together they form a unique fingerprint.

Cite this