Electrical characterization and reliability investigations of Cu TSVs with wafer-level Cu/Sn-BCB hybrid bonding

Y. J. Chang*, C. T. Ko, Z. C. Hsiao, T. H. Yu, Y. H. Chen, W. C. Lo, Kuan-Neng Chen

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

2 Scopus citations

Abstract

A wafer-level 3D integration structure with Cu TSVs based on Cu/Sn micro-bumps and BCB hybrid bonding is demonstrated. Kelvin structure and daisy chain design are adopted for electrical characterization and reliability evaluation. The results indicate the developed 3D integration scheme has excellent reliability and electrical stability.

Original languageEnglish
Title of host publication2012 International Symposium on VLSI Technology, Systems and Applications, VLSI-TSA 2012 - Proceedings of Technical Papers
DOIs
StatePublished - 16 Jul 2012
Event2012 International Symposium on VLSI Technology, Systems and Applications, VLSI-TSA 2012 - Hsinchu, Taiwan
Duration: 23 Apr 201225 Apr 2012

Publication series

NameInternational Symposium on VLSI Technology, Systems, and Applications, Proceedings
ISSN (Print)1930-8868

Conference

Conference2012 International Symposium on VLSI Technology, Systems and Applications, VLSI-TSA 2012
CountryTaiwan
CityHsinchu
Period23/04/1225/04/12

Keywords

  • 3D integration
  • BCB
  • Cu/Sn
  • Hybrid bonding
  • TSV

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