Metal-oxide-semiconductor (MOS) capacitors with rare earth (La, Ce, Pr and Tm) oxides/silicates were fabricated to investigate the effective fixed charges density (Q fix) in the gate dielectrics from the slope of EOT-V fb plots. In the small EOT region, a diffusion of gate metal atoms caused to increase fixed charge at the interface between RE-oxide and RE-silicate. TmO x/ Tm-silicate capacitors exhibit small Q fix of -6.5×10 12 cm -2 in the small EOT region.
|Title of host publication||China Semiconductor Technology International Conference 2010, CSTIC 2010|
|Number of pages||6|
|State||Published - 2010|
|Event||China Semiconductor Technology International Conference 2010, CSTIC 2010 - Shanghai, China|
Duration: 18 Mar 2010 → 19 Mar 2010
|Conference||China Semiconductor Technology International Conference 2010, CSTIC 2010|
|Period||18/03/10 → 19/03/10|