Electrical characteristics of rare earth (La, Ce, Pr and Tm) oxides/silicates gate dielectric

K. Matano*, K. Funamizu, M. Kouda, K. Kakushima, P. Ahmet, K. Tsutsui, A. Nishiyama, N. Sugii, K. Natori, T. Hattori, H. Iwai

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

1 Scopus citations

Abstract

Metal-oxide-semiconductor (MOS) capacitors with rare earth (La, Ce, Pr and Tm) oxides/silicates were fabricated to investigate the effective fixed charges density (Q fix) in the gate dielectrics from the slope of EOT-V fb plots. In the small EOT region, a diffusion of gate metal atoms caused to increase fixed charge at the interface between RE-oxide and RE-silicate. TmO x/ Tm-silicate capacitors exhibit small Q fix of -6.5×10 12 cm -2 in the small EOT region.

Original languageEnglish
Title of host publicationChina Semiconductor Technology International Conference 2010, CSTIC 2010
Pages1129-1134
Number of pages6
Edition1
DOIs
StatePublished - 2010
EventChina Semiconductor Technology International Conference 2010, CSTIC 2010 - Shanghai, China
Duration: 18 Mar 201019 Mar 2010

Publication series

NameECS Transactions
Number1
Volume27
ISSN (Print)1938-5862
ISSN (Electronic)1938-6737

Conference

ConferenceChina Semiconductor Technology International Conference 2010, CSTIC 2010
CountryChina
CityShanghai
Period18/03/1019/03/10

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