Electrical Characteristics of Rapid Thermal Nitrided-Oxide Gate n- and p-MOSFET’s with Less Than 1 Atom% Nitrogen Concentration

Hisayo Sasaki Momose, Toyota Morimoto, Yoshio Ozawa, Kikuo Yamabe, Hiroshi Iwai

Research output: Contribution to journalArticle

55 Scopus citations

Abstract

The characteristics and reliability of nitrided-oxide gate n- and p-MOSFET’s with less than 1 atom % nitrogen concentration in the gate films were investigated in detail. These very light nitridations were accomplished using NH3 gas at low temperatures—from 800° C to 900° C. Nitrogen concentrations as low as 0.13 atom% were successfully measured by SIMS and AES. The region of optimum nitrogen concentration for deep-sub-micron devices is discussed. We explain how good drivability and good hot-carrier reliability were attained simultaneously with a nitrogen concentration of around 0.5 atom%, which is equivalent to that of oxynitride gate MOSFETs using N2O gas. The suppression of boron penetration is also discussed. Light nitridation by ammonia gas is particularly desirable for deep-sub-micron processes because it can be accomplished at a relatively low temperature of about 900° C.

Original languageEnglish
Pages (from-to)546-552
Number of pages7
JournalIEEE Transactions on Electron Devices
Volume41
Issue number4
DOIs
StatePublished - Apr 1994

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