Electrical characteristics of polyoxide prepared by N2 preannealing

Kow-Ming Chang; Tzyh Cheang Lee; Jiann Yu Wang

doi:10.1149/1.1390951

Electrical characteristics of polyoxide prepared by N₂ preannealing

Kow-Ming Chang, Tzyh Cheang Lee, Jiann Yu Wang

National Chiao Tung University

Research output: Contribution to journal › Article

Abstract

This paper reports on the electrical characteristics of polyoxide with preoxidation N₂ annealing in a rapid thermal annealing system. By treating the polysilicon film before oxidation, the obtained polyoxide has the desired relative characteristics, i.e., a higher breakdown electric field, a smaller voltage shift, and larger charge-to-breakdown. This improvement is due to the reduction of defects, such as microtwins, inside the grain.

Original language	English
Pages (from-to)	39-40
Number of pages	2
Journal	Electrochemical and Solid-State Letters
Volume	3
Issue number	1
DOIs	https://doi.org/10.1149/1.1390951
State	Published - 1 Jan 2000

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Chang, K-M., Lee, T. C., & Wang, J. Y. (2000). Electrical characteristics of polyoxide prepared by N₂ preannealing. Electrochemical and Solid-State Letters, 3(1), 39-40. https://doi.org/10.1149/1.1390951

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