Abstract
This paper reports on the electrical characteristics of polyoxide with preoxidation N2 annealing in a rapid thermal annealing system. By treating the polysilicon film before oxidation, the obtained polyoxide has the desired relative characteristics, i.e., a higher breakdown electric field, a smaller voltage shift, and larger charge-to-breakdown. This improvement is due to the reduction of defects, such as microtwins, inside the grain.
Original language | English |
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Pages (from-to) | 39-40 |
Number of pages | 2 |
Journal | Electrochemical and Solid-State Letters |
Volume | 3 |
Issue number | 1 |
DOIs | |
State | Published - 1 Jan 2000 |