Electrical characteristics of polyoxide prepared by N₂ preannealing

This paper reports on the electrical characteristics of polyoxide with preoxidation N₂ annealing in a rapid thermal annealing system. By treating the polysilicon film before oxidation, the obtained polyoxide has the desired relative characteristics, i.e., a higher breakdown electric field, a smaller voltage shift, and larger charge-to-breakdown. This improvement is due to the reduction of defects, such as microtwins, inside the grain.