Electrical characteristics of n, p-In0.53Ga0.47As MOSCAPs with in situ PEALD-AlN interfacial passivation layer

Quang Ho Luc, Edward Yi Chang, Hai Dang Trinh, Yueh Chin Lin, Hong Quan Nguyen, Yuen Yee Wong, Huy Binh Do, Sayeef Salahuddin, Chen-Ming Hu

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30 Scopus citations


The effects of plasma enhanced atomic layer deposition (PEALD)-AlN interfacial passivation layer (IPL) on the Al2O3/In 0.53Ga0.47As interfaces qualities are studied with different plasma powers. The improvement in electrical properties, including capacitance-voltage (C-V) hysteresis, frequency dispersion, and interface state densities (Dit) are demonstrated on the Al2O3/n, p-In 0.53Ga0.47As MOS capacitors. The excellent C-V behaviors are observed on both type of In0.53Ga0.47Asbased MOS devices by performing a thin AlN-IPL at the plasma power of 150 W. To explore the interaction between PEALD-AlN layer and In0.53Ga0.47As surface, X-ray photoelectron spectroscopy and high-resolution transmission electron microscopy analyses have also been characterized.

Original languageEnglish
Article number6840346
Pages (from-to)2774-2778
Number of pages5
JournalIEEE Transactions on Electron Devices
Issue number8
StatePublished - 1 Jan 2014


  • AlN
  • AlO
  • In.Ga.As
  • MOS capacitor (MOSCAP)
  • plasma enhanced atomic layer deposition (PEALD).

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