Electrical characteristics of MOSFETs with La2O3/Y2O3 gate stack

Parhat Ahmet*, Kentaro Nakagawa, Kuniyuki Kakushima, Hiroshi Nohira, Kazuo Tsutsui, Nobuyuki Sugii, Takeo Hattori, Hiroshi Iwai

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

10 Scopus citations

Abstract

A metal oxide semiconductor field effect transistor (MOSFET) with ultra-thin La2O3/Y2O3 high-k gate dielectric was fabricated. The effects of thermal treatment process on both physical and electrical characteristics of the La2O3/Y2O3 stack were studied using XPS and electrical measurements. It was observed that the effective mobility of the fabricated MOSFETs with La2O3/Y2O3 gate stack was not degraded with increasing the annealing temperatures up to 600 °C. X-ray photoelectron spectroscopy (XPS) analysis also revealed that the formation of SiO2 and silicate layer at the interface was suppressed in La2O3/Y2O3 stack compare to that of in La2O3 single layer. Obtained results suggesting that La2O3/Y2O3 gate stack is one of the promising candidates for high-k gate insulator to be used in the future metal oxide field effect transistors.

Original languageEnglish
Pages (from-to)1769-1771
Number of pages3
JournalMicroelectronics Reliability
Volume48
Issue number11-12
DOIs
StatePublished - Nov 2008

Fingerprint Dive into the research topics of 'Electrical characteristics of MOSFETs with La<sub>2</sub>O<sub>3</sub>/Y<sub>2</sub>O<sub>3</sub> gate stack'. Together they form a unique fingerprint.

Cite this