This paper presents the electrical characteristics of MOSFET's and MOS capacitors utilizing thin (80-230 A) low-pressure chemical-vapor-deposited oxide films deposited at 12 Å/min. MOSFET's using CVD oxides show good electrical characteristics with 70-90 percent of the surface mobility of conventional MOSFET's. The CVD oxides exhibit the same low leakage current and high breakdown fields as the thermal oxides, and significantly lower trapping and trap generation rates than thermally grown oxides. Interface state densities of ≾3 x 1010 cm-2 eV-1 are obtained from CVD devices by using a short annealing in oxygen ambient following the deposition. These results indicate that these LPCVD oxide films may be promising dielectrics for MOS device application.