In this paper, we have studied the mechanism of equivalent oxide thickness (EOT) growth after annealing using oxygen diffusion model from W gate electrode. It has been revealed that proper thickness W insertion into metal/high-k interface and TaSi2 capping layer could depress EOT growth after post metallization annealing and achieve small Capacitance-Voltage (CV) hysteresis.
|Title of host publication||ECS Transactions - Physics and Technology of High-k Gate Dielectrics 6|
|Number of pages||10|
|State||Published - 2008|
|Event||Physics and Technology of High-k Gate Dielectrics 6 - 214th ECS Meeting - Honolulu, HI, United States|
Duration: 13 Oct 2008 → 15 Oct 2008
|Conference||Physics and Technology of High-k Gate Dielectrics 6 - 214th ECS Meeting|
|Period||13/10/08 → 15/10/08|