Electrical characteristics of metal/high-k mos devices using effective oxygen control for sub-1nm EOT

K. Okamoto*, K. Kakushima, P. Ahmet, K. Tsutsui, N. Sugii, A. N. Chandorkar, T. Hattori, H. Iwai

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Scopus citations

Abstract

In this paper, we have studied the mechanism of equivalent oxide thickness (EOT) growth after annealing using oxygen diffusion model from W gate electrode. It has been revealed that proper thickness W insertion into metal/high-k interface and TaSi2 capping layer could depress EOT growth after post metallization annealing and achieve small Capacitance-Voltage (CV) hysteresis.

Original languageEnglish
Title of host publicationECS Transactions - Physics and Technology of High-k Gate Dielectrics 6
Pages203-212
Number of pages10
Edition5
DOIs
StatePublished - 2008
EventPhysics and Technology of High-k Gate Dielectrics 6 - 214th ECS Meeting - Honolulu, HI, United States
Duration: 13 Oct 200815 Oct 2008

Publication series

NameECS Transactions
Number5
Volume16
ISSN (Print)1938-5862
ISSN (Electronic)1938-6737

Conference

ConferencePhysics and Technology of High-k Gate Dielectrics 6 - 214th ECS Meeting
CountryUnited States
CityHonolulu, HI
Period13/10/0815/10/08

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    Okamoto, K., Kakushima, K., Ahmet, P., Tsutsui, K., Sugii, N., Chandorkar, A. N., Hattori, T., & Iwai, H. (2008). Electrical characteristics of metal/high-k mos devices using effective oxygen control for sub-1nm EOT. In ECS Transactions - Physics and Technology of High-k Gate Dielectrics 6 (5 ed., pp. 203-212). (ECS Transactions; Vol. 16, No. 5). https://doi.org/10.1149/1.2981603