Electrical characteristics of low temperature polysilicon TFT with a novel TEOS/oxynitride stack gate dielectric

Kow-Ming Chang*, Wen Chih Yang, Chiu Pao Tsai

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

41 Scopus citations

Abstract

This investigation is the first to demonstrate a novel tetraethylorthosilicate (TEOS)/oxynitride stack gate dielectric for low-temperature poly-Si (LTPS) thin film transistors (TFTs), composed of a plasma-enhanced chemical vapor deposition (PECVD) thick TEOS oxide/ultrathin oxynitride grown by PECVD N2O-plasma. The stack oxide shows a very high electrical breakdown field of 8.4 MV/cm, which is approximately 3 MV/cm larger than traditional PECVD TEOS oxide. The field effective mobility of stack oxide LTPS TFTs is over 4 times than that of traditional TEOS oxide LTPS TFTs. These improvements are attributed to the high quality N2O-plasma grown ultrathin oxynitride forming strong Si ≡ N bonds, as well as to reduce the trap density in the oxynitride/poly-Si interface.

Original languageEnglish
Pages (from-to)512-514
Number of pages3
JournalIEEE Electron Device Letters
Volume24
Issue number8
DOIs
StatePublished - 1 Aug 2003

Keywords

  • NO-plasma oxynitride
  • Stack oxide
  • Thin film transistors (TFTs)

Fingerprint Dive into the research topics of 'Electrical characteristics of low temperature polysilicon TFT with a novel TEOS/oxynitride stack gate dielectric'. Together they form a unique fingerprint.

Cite this