The effects of high temperature (27°C to 300°C) on electrical characteristics of long n and p channel metal-oxide semiconductor field-effect transistors (MOSFET's) are used to extend the validity of the conventional (room temperature) large and small signal models of these devices. A complementary metal-oxide semiconductor (CMOS) inverter's transfer characteristics and switching speed performance, and the frequency response of a simple resistive load inverter are presented, with temperature as a parameter. Some implications of the models developed, on analog MOS circuit design (for high-temperature, operation), are discussed.
|Number of pages||8|
|Journal||IEEE Transactions on Components, Hybrids, and Manufacturing Technology|
|State||Published - 1 Jan 1984|