Electrical characteristics of high quality La2O3 gate dielectric with equivalent oxide thickness of 5 angstrom

Y. H. Wu*, M. Y. Yang, Albert Chin, W. J. Chen, C. M. Kwei

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

214 Scopus citations

Abstract

Electrical and reliability properties of ultrathin La2O3 gate dielectric have been investigated. The measured capacitance of 33 angstrom La2O3 gate dielectric is 7.2 μF/cm2 that gives an effective K value of 27 and an equivalent oxide thickness of 4.8 angstrom. Good dielectric integrity is evidenced from the low leakage current density of 0.06 A/cm2 at -1 V, high effective breakdown field of 13.5 MV/cm, low interface-trap density of 3 × 1010 eV-1/cm2, and excellent reliability with more than 10 years lifetime even at 2 V bias. In addition to high K, these dielectric properties are very close to conventional thermal SiO2.

Original languageEnglish
Pages (from-to)341-343
Number of pages3
JournalIEEE Electron Device Letters
Volume21
Issue number7
DOIs
StatePublished - 1 Jul 2000

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