Electrical characteristics of high-k stack gate dielectric thin films with LA2O3 as a buffer layer

Isao Ueda*, Shun Ichiro Ohmi, Hiroshi Iwai

*Corresponding author for this work

Research output: Contribution to conferencePaperpeer-review

Abstract

Lanthanum oxide (La2O3) was deposited by MBE on n-Si(100), and then, while keeping ultra high vacuum state, Lutetium oxide (Lu2O3) was deposited on the top of La2O 3 thin film. Formation of stack gate dielectrics thin films improved the electrical characteristics. Especially, the leakage current density of stack films tends to be reduced less than single film cases under the condition of the same physical thickness in total. La2O3 layer was converted to La-Silicate during the anneal and the Lu2O3 was converted the mixture of La2O3 and LuO2.

Original languageEnglish
Pages403-414
Number of pages12
StatePublished - 2003
EventPhysics and Technology of High-k Gate Dielectrics II - Proceedings of the Intenational Symposium on High Dielectric Constant Materials: Materials Science, Processing, Reliability, and Manufacturing Issues - Orlando, FL., United States
Duration: 12 Oct 200316 Oct 2003

Conference

ConferencePhysics and Technology of High-k Gate Dielectrics II - Proceedings of the Intenational Symposium on High Dielectric Constant Materials: Materials Science, Processing, Reliability, and Manufacturing Issues
CountryUnited States
CityOrlando, FL.
Period12/10/0316/10/03

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