Electrical characteristics of high-k La2O3 thin film deposited by e-beam evaporation method

Yongshik Kim*, Shun Ichiro Ohmi, Kazuo Tsutsui, Hiroshi Iwai

*Corresponding author for this work

Research output: Contribution to conferencePaper

Abstract

Lanthanum oxide (La2O3) were deposited by e-beam evaporation on n-Si (100), and annealed at 400°C in vacuum in-situ for 90min. From the oxide electric field, Eox, gate-substrate Fermi level difference, Vox, and temperature dependence of the current of the gate oxide, it has shown that the main conduction mechanism is the P-F (Poole-Frenkel) conduction in the accumulation region and contributed by the SCLC (Space-Charge-Limited Current) in the low gate voltage region. The dielectric constant obtained from P-F conduction was 11.6 and was consistent with the C-V result 11.9. Barrier height of trap potential well was 024V from P-F conduction. Shallow trap level from SCLC conduction was 0.22V. We also realized that SCLC does not contribute to leakage current density at the high oxide field region.

Original languageEnglish
Pages441-452
Number of pages12
StatePublished - 2003
EventPhysics and Technology of High-k Gate Dielectrics II - Proceedings of the Intenational Symposium on High Dielectric Constant Materials: Materials Science, Processing, Reliability, and Manufacturing Issues - Orlando, FL., United States
Duration: 12 Oct 200316 Oct 2003

Conference

ConferencePhysics and Technology of High-k Gate Dielectrics II - Proceedings of the Intenational Symposium on High Dielectric Constant Materials: Materials Science, Processing, Reliability, and Manufacturing Issues
CountryUnited States
CityOrlando, FL.
Period12/10/0316/10/03

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    Kim, Y., Ohmi, S. I., Tsutsui, K., & Iwai, H. (2003). Electrical characteristics of high-k La2O3 thin film deposited by e-beam evaporation method. 441-452. Paper presented at Physics and Technology of High-k Gate Dielectrics II - Proceedings of the Intenational Symposium on High Dielectric Constant Materials: Materials Science, Processing, Reliability, and Manufacturing Issues, Orlando, FL., United States.