Lanthanum oxide (La2O3) were deposited by e-beam evaporation on n-Si (100), and annealed at 400°C in vacuum in-situ for 90min. From the oxide electric field, Eox, gate-substrate Fermi level difference, Vox, and temperature dependence of the current of the gate oxide, it has shown that the main conduction mechanism is the P-F (Poole-Frenkel) conduction in the accumulation region and contributed by the SCLC (Space-Charge-Limited Current) in the low gate voltage region. The dielectric constant obtained from P-F conduction was 11.6 and was consistent with the C-V result 11.9. Barrier height of trap potential well was 024V from P-F conduction. Shallow trap level from SCLC conduction was 0.22V. We also realized that SCLC does not contribute to leakage current density at the high oxide field region.
|Number of pages||12|
|State||Published - 2003|
|Event||Physics and Technology of High-k Gate Dielectrics II - Proceedings of the Intenational Symposium on High Dielectric Constant Materials: Materials Science, Processing, Reliability, and Manufacturing Issues - Orlando, FL., United States|
Duration: 12 Oct 2003 → 16 Oct 2003
|Conference||Physics and Technology of High-k Gate Dielectrics II - Proceedings of the Intenational Symposium on High Dielectric Constant Materials: Materials Science, Processing, Reliability, and Manufacturing Issues|
|Period||12/10/03 → 16/10/03|