Electrical characteristics of HfO2 and La2O 3 gate dielectrics for In0.53Ga0.47As MOS structure

K. Funamizu*, Y. C. Lin, K. Kakushima, P. Ahmet, K. Tsutsui, N. Sugii, E. Y. Chang, T. Hattori, H. Iwai

*Corresponding author for this work

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Engineering & Materials Science