Electrical characteristics of HfO2 and La2O 3 gate dielectrics for In0.53Ga0.47As MOS structure

K. Funamizu*, Y. C. Lin, K. Kakushima, P. Ahmet, K. Tsutsui, N. Sugii, E. Y. Chang, T. Hattori, H. Iwai

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contribution

3 Scopus citations

Abstract

InGaAs MOS capacitors with HfO2 and La2O3 gate dielectrics have been investigated. La2O3 capacitor was found to result in large leakage current. This can be attributed to the annealing-induced As diffusion into La2O3 layer from InGaAs substrate. This leakage current was found to be suppressed by inserting HfO2 layer between La2O3 layer and InGaAs.

Original languageEnglish
Title of host publicationECS Transactions - Physics and Technology of High-k Gate Dielectrics 7
Pages265-270
Number of pages6
Edition6
DOIs
StatePublished - 1 Dec 2009
Event7th International Symposium on High Dielectric Constant Materials and Gate Stacks - 216th Meeting of the Electrochemical Society - Vienna, Austria
Duration: 5 Oct 20097 Oct 2009

Publication series

NameECS Transactions
Number6
Volume25
ISSN (Print)1938-5862
ISSN (Electronic)1938-6737

Conference

Conference7th International Symposium on High Dielectric Constant Materials and Gate Stacks - 216th Meeting of the Electrochemical Society
CountryAustria
CityVienna
Period5/10/097/10/09

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    Funamizu, K., Lin, Y. C., Kakushima, K., Ahmet, P., Tsutsui, K., Sugii, N., Chang, E. Y., Hattori, T., & Iwai, H. (2009). Electrical characteristics of HfO2 and La2O 3 gate dielectrics for In0.53Ga0.47As MOS structure. In ECS Transactions - Physics and Technology of High-k Gate Dielectrics 7 (6 ed., pp. 265-270). (ECS Transactions; Vol. 25, No. 6). https://doi.org/10.1149/1.3206625