InGaAs MOS capacitors with HfO2 and La2O3 gate dielectrics have been investigated. La2O3 capacitor was found to result in large leakage current. This can be attributed to the annealing-induced As diffusion into La2O3 layer from InGaAs substrate. This leakage current was found to be suppressed by inserting HfO2 layer between La2O3 layer and InGaAs.
|Title of host publication||ECS Transactions - Physics and Technology of High-k Gate Dielectrics 7|
|Number of pages||6|
|State||Published - 1 Dec 2009|
|Event||7th International Symposium on High Dielectric Constant Materials and Gate Stacks - 216th Meeting of the Electrochemical Society - Vienna, Austria|
Duration: 5 Oct 2009 → 7 Oct 2009
|Conference||7th International Symposium on High Dielectric Constant Materials and Gate Stacks - 216th Meeting of the Electrochemical Society|
|Period||5/10/09 → 7/10/09|