Electrical characteristics of Gd2O3 thin film deposited on si substrate

Chizuru Ohshima*, Ikumi Kashiwagi, Shun Ichiro Ohmi, Hiroshi Iwai

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

8 Scopus citations

Abstract

Gadolinium oxide (Gd2O3) for high-k gate dielectric films were deposited on n-Si(100) substrates by e-beam evaporation to investigate their electrical characteristics. The electrical characteristics of Gd2O3 films were evaluated by fabricating Metal-Oxide-Semiconductor (MOS) capacitors. Gd2O3 thin films were confirmed amorphous after post deposition anneal in oxygen ambient at 400°C for 5min by XRD measurement. Formation of chemical oxide on Si substrate before the deposition of the Gd2O3 films improved the electrical characteristics and surface roughness.

Original languageEnglish
Title of host publicationEuropean Solid-State Device Research Conference
EditorsElena Gnani, Giorgio Baccarani, Massimo Rudan
PublisherIEEE Computer Society
Pages415-418
Number of pages4
ISBN (Electronic)8890084782
DOIs
StatePublished - 2002
Event32nd European Solid-State Device Research Conference, ESSDERC 2002 - Firenze, Italy
Duration: 24 Sep 200226 Sep 2002

Publication series

NameEuropean Solid-State Device Research Conference
ISSN (Print)1930-8876

Conference

Conference32nd European Solid-State Device Research Conference, ESSDERC 2002
CountryItaly
CityFirenze
Period24/09/0226/09/02

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